Cree Inc. has provided its silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) for use in Delta Energy Systems' newly released line of solar inverters.
According to Cree, the use of SiC MOSFETs in the inverters can enable significant new milestones in power density, efficiency and weight.
‘The next-generation PV inverters from Delta are designed to set a new milestone of power density by utilizing SiC MOSFETs,’ says Klaus Gremmelspacher, head of research and development for PV inverters at Delta Energy Systems. ‘The SiC MOSFETs from Cree were essential for us to realize our goals for new, high-power inverters that are lightweight and have industry-leading efficiency.’
Utilizing 1,200 V SiC MOSFETs from Cree in an 11 kW PV inverter, Delta has already been able to extend the DC input voltage range while maintaining and increasing the maximum efficiency of its previous products, Cree says. The Delta 11 kW booster, which employs Cree's SiC MOSFET and now has 1 kV DC input instead of 900V, is targeted for release in the second quarter of this year.
